MRF8S9100HR3 MRF8S9100HSR3
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
η
D,
DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
f, FREQUENCY (MHz)
DD
=28Vdc,Pout
=72WCW,IDQ
= 500 mA
15 0
Gps
21 60
ηD
20
50
19
40
30
10
IRL
Figure 2. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ Pout
= 72 Watts CW
-- 5
-- 2 0
17
20
-- 1 0
-- 1 5
V
18
16
800 940820 840 860 880 900 920 1000960 980
η
D,
DRAIN
EFFICIENCY (%)
f, FREQUENCY (MHz)
Figure 3. Power Gain, Input Return Loss, EVM and Drain
Efficiency versus Frequency @ Pout
= 46 Watts Avg.
21
0
50
IRL
20
40
30
18
20
4
16
2
G
ps
, POWER GAIN (dB)
EVM, ERROR VECTOR
MAGNITUDE (% rms)
VDD
=28Vdc,Pout
=46WAvg.
IDQ
= 700 mA, EDGE Modulation
19
17
15
ηD
IRL, INPUT RETURN LOSS (dB)
-- 5
-- 2 0
-- 1 0
-- 1 5
EVM
110100
-- 6 0
-- 2 0
-- 3 0
-- 4 0
-- 5 0
TWO--TONE SPACING (MHz)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
IMD, INTERMODULATIO
N DISTORTION (dBc)
IM7--U
IM5--U
IM5--L
IM3--L
IM7--L
IM3--U
VDD
=28Vdc,Pout
= 100 W (PEP)
IDQ
= 500 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
-- 1 0
Pout, OUTPUT POWER (WATTS) CW
1 10010
20
f = 940 MHz
VDD
=28Vdc
IDQ
= 500 mA
19
17
16
Figure 5. Power Gain and Drain Efficiency
versus Output Power
G
ps
, POWER GAIN (dB)
18
920 MHz
Gps
ηD
Gps
15
0200
η
D,
DRAIN EFFICIENCY (%)
75
60
45
30
15
800 940 960 980820 840 860 880 900 920 1000
960 MHz
960 MHz
920 MHz
940 MHz
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